Sol-gel derived LaNiO3 thin films on ZrO2-buffered (1 0 0) Si substrates

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1253-1256

  Yu, Shuhui ^a   Yao, Kui ^a   Hock, Francis Tay Eng ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

A. Sol gel processes; C. Electrical conductivity; LaNiO3; Thin film; YSZ

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; GRAIN SIZE AND SHAPE; LANTHANUM COMPOUNDS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PEROVSKITE; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON; SOL-GELS; SPUTTERING; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

BUFFER LAYER; INTERFACIAL DIFFUSION; MOLAR RATIO; MONOCLINIC PHASES;

THIN FILMS;

EID: 4344591791     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.062     Document Type: Conference Paper

References (17)

1. 3 prepared by pulsed laser deposition. Appl. Surf. Sci. 69:1993;212-215.
2. 3 epitaxial films. Appl. Phys. Lett. 62:1993;2045-2048.
3. 3) isotropic metallic oxide electrodes. Appl. Phys. Lett. 63:1993;2570-2572.
4. 3 Appl. Phys. Lett. 66(20):1995;2643-2645.
5. 3 films grown on Si(0. 0 1) by pulsed laser deposition Thin Solid Films. 405:2002;117-121.
6. Chen S.-Y., Chen I.-W. Texture development, microstructure evolution, and crystallization of chemically derived PZT thin films. J. Am. Ceram. Soc. 81:1998;97-105.
7. 3 on silicon. J. Phys. D: Appl. Phys. 32:1999;R1.
8. 3 thin films grown by pulsed laser deposition. Appl. Phys. Lett. 62:1993;1233-1235.
9. 3 thin films on buffered Si (1. 0 0) Thin Solid Films. 384:2001;200-205.
10. 3 on Si(1. 0 0) by pulsed laser deposition using a MgO buffer Appl. Phys. A. 75:2002;545-549.
11. 3 for superconducting electrodes. Appl. Phys. A. 75:2002;381-385.
12. 3 thin films fabricated by the sol-gel method. J. Eur. Ceram. Soc. 21:2001;1525-1528.
13. 2 coating. Surf. Coat. Technol. 155:2002;1-10.
14. Chen C.-H., Wakiya N., Shinozake K., Mizutani N. Effects of thermal coefficient and lattice constant mismatches on mosaic dispersion of heteroepitaxial YSZ/Si(0. 0 1) thin films J. Phys. D: Appl. Phys. 35:2002;151-156.
15. Ju B.-H., Sn J.-W., Kim H.-J., Lee D.-W., Jung C.-H., Par S.-D., Kim C.-J. Fabrication of YSZ buffer layer by single source MOCVD technique for YBCO coated conductor. Physica C. 392-396:2003;867-872.
16. M. Mashita, M. Yoshida, Handbook of Thin Film Engineering, Kdansha, 1998, p. 188.
17. 3 thin films by pulsed laser ablation. Mater. Lett. 26:1996;73-76.