Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing

Journal of Sol-Gel Science and Technology

Volumn 42, Issue 3, 2007, Pages 369-373

  Zhai, Jiwei ^a   Shen, Bo ^a   Yao, Xi ^a   Xu, Zhengkui ^b   Li, Xin ^b   Chen, Haydn ^b  

^a TONGJI UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Antiferroelectric; Electrical property; Phase transformation; Sol gel process; Thin film

Indexed keywords

ANTIFERROELECTRIC MATERIALS; DEPOSITION; ELECTRIC FIELD EFFECTS; LEAD COMPOUNDS; PHASE TRANSITIONS; THERMAL EFFECTS;

ANTIFERROELECTRIC THIN FILMS; SILICON SUBSTRATES; THERMAL ACTIVATION;

THIN FILMS;

EID: 34247403399     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-007-0767-z     Document Type: Article

References (17)

1. Yamakawa K, Trolier-Mckinstry S, Dougherty JP, Krupanidhi SB (1995) Appl Phys Lett 67:2014
2. Seveno R, Gundel HW, Seifert S (2001) Appl Phys Lett 79:4204
3. Xu B, Moses P, Pai NG, Cross LE (1998) Appl Phys Lett 72:593
4. Jang JH, Yoon KH, Shin HJ (1998) Appl Phys Lett 73:1823
5. Xu B, Ye Y, Cross LE (2000) J Appl Phys 87:2507
6. Xu B, Cross LE, Bernstein JJ (2000) Thin Sol Films 377:712
7. Zhai J, Cheung MH, Xu ZK, Li X, Chen H, Colla EV, Wu TB (2002) Appl Phys Lett 81:3621
8. Zhai J, Li X, Yao Y, Chen Haydn (2003) Mater Sci Engng B 99: 230
9. Park S-E, Pan M-J, Markowski K (1997) J Appl Phys 82:1798
10. Lee HY, Wu TB (1998) J Mater Res 13:2291
11. Bharadwaja SSN, Krupanidhi SB (1999) J Appl Phys 86:5862
12. Pertsev NA, Zembilgotov AG, Tagantsev AK (1998) Phys Rev Lett 80:1988
13. Lee JJ, Thio CL, Desu SB (1995) J Appl Phys 78:5073
14. Zhai J, Yao Y, Li X, Hung TF, Xu ZK, Chen H, Colla EV, Wu TB (2002) J Appl Phys 92(7):3990-3994
15. Tani T, Li JF, Viehland D, Payne DA (1994) J Appl Phys 75:3017
16. Samara GA (1970) Phys Rev B 1:3777
17. Ujma Z, Handerek J, Pisarski M (1985) Ferroelectrics 64:237