Raman scattering studies of polycrystalline 3C-SiC deposited on SiO2 and AlN thin films

Physica B: Condensed Matter

Volumn 404, Issue 1, 2009, Pages 7-10

  Jeong, Junho ^a   Jang, Kiwan ^a   Lee, Ho Sueb ^a   Chung, Gwiy Sang ^b   Kim, Gwi yeol ^b  

^a Changwon National University   (South Korea)

^b University of Ulsan   (South Korea)

Author keywords

AlN; HMDS; Poly 3C SiC; Raman scattering

Indexed keywords

ATMOSPHERIC SPECTRA; GRAPHITE; GROWTH (MATERIALS); GROWTH TEMPERATURE; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING; SILICON CARBIDE; SILICON COMPOUNDS;

ALN; ALN THIN FILMS; ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITIONS; BIAXIAL STRESSES; CARRIER GASES; HEXAMETHYLDISILANE; HMDS; MEMS APPLICATIONS; NANOCRYSTALLINE GRAPHITES; POLY 3C-SIC; POLYCRYSTAL LINES; RAMAN SPECTRUMS; SCATTERING CHARACTERISTICS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 57649156219     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.09.040     Document Type: Article

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