SCOPUS 정보 검색 플랫폼

Volumn 14, Issue 3-7, 2005, Pages 1134-1137

Microstructure analysis on polycrystalline 3C-SiC thin films

(8) Ricciardi, C a,b Giorgis, F a,b Fanchini, G a,b Musso, S a,b Ballarini, V a,b Bennici, E a,b Barucca, G c Rossi, A M d

a POLITECNICO DI TORINO (Italy)

b Material and Microsystems Laboratori X Lab (Italy)

c UNIVERSITÀ POLITECNICA DELLE MARCHE (Italy)

d ISTITUTO ELETTROTECNICO NAZIONALE GALILEO FERRARIS (Italy)

Author keywords

Chemical vapor deposition; Defect characterization; Silicon carbide (SiC); Vibrational properties characterization

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON DIFFRACTION; ELECTRON SPECTROSCOPY; MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; MOLECULAR VIBRATIONS; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; RAMAN SCATTERING; THIN FILMS;

BAND GAPS; DEFECT CHARACTERIZATION; POLYTYPISM; VIBRATIONAL PROPERTIES CHARACTERIZATION;

SILICON CARBIDE;

EID: 18444372990 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2005.01.029 Document Type: Conference Paper

Times cited : (13)

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