Polycrystalline SiC growth and characterization

Applied Surface Science

Volumn 238, Issue 1-4 SPEC. ISS., 2004, Pages 331-335

  Ricciardi, C ^a   Aimo Boot, E ^a   Giorgis, F ^a   Mandracci, P ^a   Meotto, U M ^a   Barucca, G ^b  

^a POLITECNICO DI TORINO   (Italy)

^b INFM   (Italy)

Author keywords

MEMS; Raman spectroscopy; SiC; TEM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT DENSITY; LATTICE MISMATCH; MICRO-RAMAN MEASUREMENTS;

SILICON CARBIDE;

EID: 4644362603     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.225     Document Type: Conference Paper

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