AlGaN/GaN field effect Schottky barrier diode (FESBD)

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2602-2606

  Yoshida, S ^a   Li, J ^a   Ikeda, N ^a   Hataya, K ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRODES; GALLIUM NITRIDE; GROWTH KINETICS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALGAN/GAN HETEROSTRUCTURE; DUAL SCHOTTKY STRUCTURES; FIELD EFFECT SCHOTTKY BARRIER DIODES (FESBD); SELECTIVE AREA GROWTH (SAG) TECHNIQUE;

SCHOTTKY BARRIER DIODES;

EID: 27444440201     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461300     Document Type: Conference Paper

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