Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing

Applied Physics Letters

Volumn 83, Issue 21, 2003, Pages 4321-4323

  Hong, S ^a,b   Foo, Y L ^a,c   Bratland, K A ^a   Spila, T ^a   Ohmori, K ^a   Sardela Jr , M R ^a   Greene, J E ^a   Yoon, E ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b Seoul National University   (South Korea)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; GERMANIUM COMPOUNDS; MIXTURES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PRESSURE; RAPID THERMAL ANNEALING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SURFACES; ULTRAHIGH VACUUM;

GAS SOURCE MOLECULAR BEAM EPITAXY; IN SITU RAPID THERMAL ANNEALING; RELAXED ALLOY LAYERS;

SILICON ALLOYS;

EID: 0346846586     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629792     Document Type: Article

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