Non-selective thin SiGe strain-relaxed buffer layers: Growth and carbon-induced relaxation

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 260-265

  Caymax, Matty ^a   Delhougne, Romain ^a   Ries, Mike ^b   Luysberg, Martina ^c   Loo, Roger ^a  

^a IMEC   (Belgium)

^b MEMC Electronic Materials Inc   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Epitaxy; Relaxation mechanism; Strain relaxed buffers; Strained silicon

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); GERMANIUM; NUCLEATION; RELAXATION PROCESSES; SILICON; SILICON CARBIDE;

MFR SOURCE; RELAXATION MECHANISM; STRAIN-RELAXED BUFFERS; STRAINED SILICON;

THIN FILMS;

EID: 33646093970     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.346     Document Type: Article

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