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Applied Surface Science

Volumn 243, Issue 1-4, 2005, Pages 401-408

Annealing and deposition effects of the chemical composition of silicon-rich nitride

(5) Andersen, K N a Svendsen, W E a Stimpel Lindner, T b Sulima, T b Baumgartner H b

a TECHNICAL UNIVERSITY OF DENMARK (Denmark)

b BUNDESWEHR UNIVERSITY MUNICH (Germany)

Author keywords

Annealing; LPCVD; Si diffusion; Silicon rich nitride; Stoichiometry; X ray photoelectron spectroscopy (XPS)

Indexed keywords

ABSORPTION; AMORPHOUS MATERIALS; ANNEALING; CHEMICAL BONDS; COMPOSITION; DIFFUSION; OPTICAL SYSTEMS; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; SUBSTRATES; THIN FILMS; WAVEGUIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

DESPOSITION EFFECTS; OPTICAL TELECOMMUNICATION; SEMICONDUCTOR TECHNOLOGY; SILICON RICH NITRIDES;

SILICON NITRIDE;

EID: 14544302709 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.09.096 Document Type: Article

Times cited : (34)

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