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Volumn 203, Issue 7, 2006, Pages 1663-1666

Characterization of free standing GaN grown by HVPE on a LiAlO 2 substrate

Author keywords

[No Author keywords available]

Indexed keywords

LAYER THICKNESS; LIALO 2 SUBSTRATE; LUMINESCENCE BANDS;

CATHODOLUMINESCENCE; COOLING; DEFECTS; LITHIUM COMPOUNDS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 33745013704 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200565136 Document Type: Article

Times cited : (11)

References (13)

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13
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