Influence of inversion domains on formation of V-shaped pits in GaN films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 11 B, 2001, Pages

  Li, Hongdong ^a   Wang, Tao ^a   Lacroix, Yves ^b   Jiang, Nan ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Nitride Semiconductor Co Ltd   (Japan)

Author keywords

Gallium nitride film; Inversion domain; TEM; V shaped pit

Indexed keywords

DISLOCATIONS (CRYSTALS); FILM GROWTH; GALLIUM NITRIDE; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE FILM; INDIUM GALLIUM NITRIDE; INVERSION DOMAINS; V-SHAPED PIT;

SEMICONDUCTING FILMS;

EID: 0035891945     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1254     Document Type: Letter

References (11)