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Volumn 40, Issue 5, 2008, Pages 1006-1009
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Demonstration of gating action in atomically controlled Si:P nanodots defined by scanning probe microscopy
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Author keywords
Doping; Atom electronics; Molecular beam epitaxy; Quantum dots; Scanning probe microscopy; Silicon
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Indexed keywords
ELECTRON RESONANCE;
MOLECULAR BEAM EPITAXY;
OHMIC CONTACTS;
PHOSPHORUS;
SCANNING PROBE MICROSCOPY;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTOR QUANTUM DOTS;
ATOM ELECTRONICS;
CONDUCTANCE GAP;
NANOSTRUCTURED MATERIALS;
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EID: 39649112391
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2007.08.057 Document Type: Article |
Times cited : (5)
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References (12)
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