Characterization of silicon oxynitride thin films deposited by electron beam physical vapor deposition technique

Materials Letters

Volumn 57, Issue 26-27, 2003, Pages 4170-4175

  Mohite, K C ^a   Khollam, Y B ^b   Mandale, A B ^b   Patil, K R ^b   Takwale, M G ^a  

^a UNIVERSITY OF PUNE   (India)

^b NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

Antireflective coating; Deposition; EB PVD technique; Optical materials and properties; Silicon oxynitride; Thin films

Indexed keywords

ANTIREFLECTION COATINGS; ELECTRON BEAMS; ELLIPSOMETRY; OPTICAL MATERIALS; PHYSICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON COMPOUNDS; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM THICKNESS;

THIN FILMS;

EID: 0042229115     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(03)00284-2     Document Type: Article

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