Sidewall protection by nitrogen and oxygen in poly-Si1- xGex anisotropic etching using Cl2/N 2/O2 plasma

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 239-243

  Cho, Hang Sup ^a   Takehiro, Shinobu ^a   Sakuraba, Masao ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Anisotropic dry etching; Electron cyclotron resonance; N2; O2; Poly Si1 xGex; Sidewall protection

Indexed keywords

ANISOTROPY; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; NITROGEN; OXYGEN; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANISOTROPIC DRY ETCHING; POLY-SI1-XGEX; RADICAL ETCHING; SIDEWALL PROTECTION;

POLYSILICON;

EID: 13244270136     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.035     Document Type: Conference Paper

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