Is there LOCOS after LOCOS?

Solid-State Electronics

Volumn 41, Issue 7, 1997, Pages 1027-1039

  Deleonibus, S ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOS DEVICES; OXIDATION; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

LOCAL OXIDATION OF SILICON (LOCOS) ISOLATION; TRENCH ISOLATION PROCESS;

MICROELECTRONIC PROCESSING;

EID: 0031190669     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00017-8     Document Type: Article

References (39)

1. Appels, J. A., Kooi, E., Paffen, M. M., Schattorjie, J. J. H. and Verluyken, W. H. C. G., Philips Res. Rep., 1970, 25, 1118.
2. Dennard, R. H., Gaensslen, F. H., Walker, E. J. and Cook, P. W., IEDM 1978 Tech. Digest., 1978, pp. 492-495.
3. Han, Y. Pin. and Ma, B., ECS meeting Tech. Digest, 1984, 84-1, 98-99.
4. Matsukawa, N., Nozawa, H. and Matsunaga, J., IEEE Trans. on Electron Devices, 1982, ED-12, (3), 92-94.
5. Chiu, K. Yi, Moll, J. L. and Manoliu, J., IEEE Trans. On Electron Devices, 1992, ED-29, (4), 554-560.
6. Hui, J., Chiu, T. Y., Wong, S. and Oldham, W. G., IEEE Electron Devices Letts, 1982, ED-29, (4), 536-540.
7. Deleonibus, S., Martin, F., du Port de Pontcharra, J. and Tedesco, S., J. Electrochem. Soc., 1993, 140, (10), 2908-2915.
8. Roth, S. S., Ray, W., Mazure C. and Kirsch, H. C., IEEE Electron Devices Letts, 1991, ED-12, (3), 92-94.
9. Deleonibus, S., Spinelli, P., Vinet, F., Heitzmann, M., Guegan, G. and Leroux, C., Ext. Abstracts SSDM94, Aug. 1994, pp. 913-915, Yokohama (Japan).
10. Deleonibus, S. and Kim, S. S., Ext. Abstracts SSDM93, Aug. 1993, pp. 525-527, Chiba (Japan).
11. Mizuno, T., IEEE Trans. Electron Devices, 1987, ED-34, (11), 2255-2259.
12. Lutze, J. W., Perera, A. H. and Krusius, J. P., Ext. Abstracts Electrochem. Soc., 1989, 89(1), Abstract no. 197, pp. 289-290.
13. Bassous, E., Yu, H. N. and Maniscalco, V., J. Electrochem. Soc., 1976, 123 (11), 1729-1737.
14. Deleonibus, S., Proc. ESSDERC 1993, pp. 391-398, Grenoble.
15. Deleonibus, S., Molle, P., Lajzerowicz, J., Guillaumot, B., Laporte, P. and Bergemont, A., Proc. ESSDERC '89, pp. 151-154, Berlin.
16. Molle, P., Deleonibus, S. and Martin, F., J. Electrochem. Soc., 1991, 138, (12), 3732-3738.
17. Deleonibus, S., Molle, P., Tosti, L. and Taccusel, M. C., J. Electrochem. Soc., 1991, 138, (12), 3739-3742.
18. Deleonibus, S., Martin, F., Blanchard, B., Ermolieff, A. and Papon, A. M., J. Electrochem. Soc., 1994, 141, (10), 2811-2820.
19. Deleonibus, S., Proc. 3rd Int. Symp. on Silicon Dioxide and Silicon Nitride Thin Insulating Films. J. Electrochem. Soc., 1994, 94(16), 525-533, San Francisco (CA).
20. Kobayashi, T., Nakayama, S., Miyake, S. and Okazaki, Y., IEDM '94 Tech. Digest, 1994, 683-686, Washington (DC).
21. Deleonibus, S., Martin, F., Kim, S. S., Emami, A., Florin, B., Heitzmann, M. and Leroux, C., Ext. Abstracts SSDM 1995, pp. 893-895, Osaka (Japan).
22. Lie, L. N., Razouk, R. R. and Deal. B. E., J. Electrochem. Soc., 1982, 128, (12), 2828.
23. Kim, S. S., Emami, A. and Deleonibus, S., Solid State Technology, 1994, 67-72.
24. Matthews, V. K., Fazan, P. C., Jeng, N., Kim, S. S. and Emami, A., Ext. Abstracts SSDM 1995, pp. 899-901, Osaka (Japan).
25. Deleonibus, S., Martin, F., Geuégan, G., Lerme, M., Tedesco, S., Reimbold, G., ESSDERC '94 Tech. Digest, 1994, pp. 203-206, Edinburgh (UK).
26. Martin, F., Bertin, F., Sprey, H. and Granneman, E., Semiconductor Science Technology, 1991, 6, 1100.
27. Nojiri, K., Ext. Abstracts SSDM 1985, p. 337-340, Tokyo (Japan).
28. Sudoh, Y., Kaga, T., Yugami, J. and Kure, T., Tech. Digest VLSI Symp. 95, pp. 117-118 Kyoto (Japan).
29. Fuse, G., Ogawa, H., Tateiwa, K., Nakao, I., Odanaka, S., Fukumoto, M., Iwasaki, H. and Ohzone, T., Tech. Digest IEDM '87, pp. 732-735, Washington (D.C.).
30. Davari, B., Koburger, C., Schulz, R., Warnock, J. D., Furukawa, T., Jost, M., Taur, Y., Schwittek, W., DeBrosse, J. K., Kerbaugh, M. L. and Mauer, J. L., Tech. Digest IEDM '89, pp. 61-64, Washington (D.C.).
31. Deleonibus, S., Heitzmann, M., Demolliens, O., Gobil, Y., Martin, F., Papon, A. M. and Mondon, F., Proc. 3rd Int. Symp. on Silicon Dioxide and Silicon Nitride thin insulating films. J. Electrochem. Soc., 1994, 94(16), pp. 485-491, San Francisco (CA).
32. Pierce, J. M., Renteln, P., Burger, W. R. and Ahn, S. T., Ext. Abstracts ECS Meeting Spring '91, pp. 595-596, Washington (D.C.).
33. Deleonibus, S., Heitzmann, M., Gobil, Y., Martin, F., Demolliens, O. and Guibert, J. C., Ext. Abstracts SSDM '95, pp. 587-589, Osaka (Japan).
34. Hayashi, Y., Nakajima, T. and Kunio, T., Ext. Abstracts SSDM '95, pp. 584-586, Okaka (Japan).
35. Shibahara, K., Fujimoto, Y., Hamada, M., Iwao, S., Tokashiki, K. and Kunio. T., Tech. Digest IEDM '92, pp. 275-278, San Francisco (CA).
36. Sze, S. M., Physics of Semiconductor Devices, 1981, Wiley, p. 478.
37. Hung, K. K., Ko, P. K., Hu, C. and Cheng, Y. C., IEEE Trans. on Electron Devices. 1989, 36, (6), 1217.
38. Shibahara, K., Mori, H., Ohnishi, S., Oikawa, R., Nakajima, K., Yamashita, H., Itoh, K., Kamiyama, S., Watanabe, H., Hamada, T. and Koyama, K., Tech. Digest IEDM '94, pp, 639-642, San Francisco (CA).
39. Deleonibus, S., J. Electrochem. Soc., Nov. 1996.