Ge nanocrystal charge trapping devices fabricated by one-step oxidation on poly-SiGe

Applied Surface Science

Volumn 255, Issue 5 PART 1, 2008, Pages 2512-2516

  Kao, Chyuan Haur ^a   Lai, Chao Sung ^a   Huang, Chen Sheng ^a   Fan, K M ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Charge trapping; Ge nanocrystal; One step oxidation

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; CHARGE TRAPPING; FABRICATION; GERMANIUM; NANOCRYSTALS; OXIDATION; SILICON COMPOUNDS;

AMORPHOUS SI FILMS; CHARGE TRAPPING DEVICES; GE NANOCRYSTALS; GERMANIUM NANOCRYSTALS; MEMORY WINDOW; ONE-STEP OXIDATION; OXIDE LAYER; POLYCRYSTALLINE;

GERMANIUM COMPOUNDS;

EID: 56949097899     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.195     Document Type: Article

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