Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package

Thin Solid Films

Volumn 517, Issue 5, 2009, Pages 1740-1745

  Ikeda, Akihiro ^a   Sakamoto, Atsushi ^a   Hattori, Reiji ^a   Kuroki, Yukinori ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Diffusion barrier; Electroless plating; Ni B; Through Si via

Indexed keywords

CIVIL AVIATION; COPPER; DIFFUSION; DIFFUSION BARRIERS; NICKEL ALLOYS; SEMICONDUCTOR DOPING; SILANES; SILICON; SILICON COMPOUNDS;

AMINOPROPYL; ANNEALING TEMPERATURES; BARRIER LAYERS; CHIP PACKAGES; CONFORMAL DEPOSITIONS; CU ATOMS; CU DIFFUSIONS; EFFECTIVE DIFFUSIONS; ELECTROLESS NI; NI-B; SI SUBSTRATES; SIDE WALLS; THROUGH-SI VIA; TRIETHOXYSILANE; VIA INTERCONNECTIONS;

NICKEL;

EID: 56949097878     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.09.068     Document Type: Article

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