Finite-element study of strain field in strained-Si MOSFET

Micron

Volumn 40, Issue 2, 2009, Pages 274-278

  Liu, H H ^a   Duan, X F ^a   Xu, Q X ^b  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Finite element; LACBED; MOSFET; Strained Si

Indexed keywords

ELECTRON DIFFRACTION; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

CHANNEL REGIONS; COMPRESSIVE STRAINS; FINITE-ELEMENT; FINITE-ELEMENT CALCULATIONS; FINITE-ELEMENT METHODS; LACBED; LOW DOSES; MOSFET; SEMICONDUCTOR FIELD EFFECTS; SI MOSFET; SI SUBSTRATES; SOURCE AND DRAIN EXTENSIONS; SOURCE/DRAIN REGIONS; STRAIN FIELDS; STRAINED-SI; TRANSITION REGIONS;

MOSFET DEVICES;

EID: 56949093264     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2008.06.005     Document Type: Article

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