Study of strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction

Ultramicroscopy

Volumn 108, Issue 9, 2008, Pages 816-820

  Liu, H H ^a   Duan, X F ^a   Xu, Qiuxia ^b   Liu, Bang Gui ^a  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Large angle convergent beam electron diffraction; Metal oxide semiconductor field effect transistor; Strained Si; Transmission electron microscopy

Indexed keywords

CEMENTS; DIELECTRIC DEVICES; DIFFRACTION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; ELECTRON MULTIPLIERS; GERMANIUM; METALS; MOSFET DEVICES; PHOTOACOUSTIC EFFECT; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SILICON; TRANSISTORS;

(100) SILICON; CHANNEL REGIONS; COMPRESSIVE STRAINS; CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET); PMOSFET'S; PRE-AMORPHIZATION IMPLANTATION (PAI); SILICON CHANNELS; SOURCE/DRAIN EXTENSION (SDE);

FIELD EFFECT TRANSISTORS;

METAL OXIDE; SILICON;

ARTICLE; COMPRESSIVE STRENGTH; COST BENEFIT ANALYSIS; ELECTRON DIFFRACTION; FIELD EFFECT TRANSISTOR; FIELD EMISSION; IMPLANTATION; MEDICAL INSTRUMENTATION; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 48149103512     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.01.002     Document Type: Article

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