In situ monitoring of GaN reactive ion etching by optical emission spectroscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 4 A, 2001, Pages

  Yoshida, H ^a   Urushido, T ^a   Miyake, H ^a   Hiramatsu, K ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

Chlorine plasma; Dry etching; GaN; Optical emission spectroscopy (OES)

Indexed keywords

DISSOCIATION; EMISSION SPECTROSCOPY; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; PLASMAS; REACTIVE ION ETCHING; SAPPHIRE; SUBSTRATES;

OPTICAL EMISSION INTENSITY; OPTICAL EMISSION SPECTROSCOPY (OES);

GALLIUM NITRIDE;

EID: 0035301898     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l313     Document Type: Article

References (12)