Three-dimensional full-band simulations of Si nanowire transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Luisier, Mathieu ^a   Schenk, Andreas ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; ELECTRON DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SILICON; THREE DIMENSIONAL; TRANSISTORS;

BAND PROPERTIES; CHANNEL ORIENTATIONS; CURRENT CHARACTERISTICS; NANO-WIRE TRANSISTORS; SEMI-EMPIRICAL; TRIPLE-GATE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 46049109362     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346737     Document Type: Conference Paper

References (6)

1. Y. Cui, Z. Zhong, D. Wang, J. Wang, and C. M. Lieber, Nano Letters 3, pp. 149-152, 2003.
2. T. B. Boykin, G. Klimeck, and F. Oyafuso, Phys. Rev. B 69, p. 115201, 2004.
3. J. Wang, A. Rahman, G. Klimeck, and M. Lundstrom, IEDM Proc. pp. 282-285, 2005.
4. M. Luisier, A. Schenk, and W. Fichtner, J. Appl. Phys. 100, p. 043713, 2006.
5. M. Luisier, G. Klimeck, A. Schenk, and W. Fichtner, unpublished, 2006.
6. S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy, and O. L. Krivanek, Phys. Rev. B 32, pp. 8171-8186, 1985.