Growth and characterization of unintentionally doped GaN grown on silicon(1 1 1) substrates

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4888-4890

  Leys, M ^a   Cheng, Kai ^a,b   Derluyn, J ^a   Degroote, S ^a   Germain, M ^a   Borghs, G ^a,b   Taylor, C A ^c   Dawson, P ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

A1. Impurities; A1. Line defects; A1. Point defects; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B3. High electron mobility transistor

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTROMAGNETIC WAVES; ELECTRON MOBILITY; GALLIUM NITRIDE; GROWTH TEMPERATURE; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT; LIGHT EMISSION; LUMINESCENCE; MASS SPECTROMETRY; NITRIDES; POINT DEFECTS; RESONANT TUNNELING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SINGLE CRYSTALS; SUBSTRATES; VAPOR PHASE EPITAXY; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

A1. IMPURITIES; A1. LINE DEFECTS; A1. POINT DEFECTS; A3. METALORGANIC VAPOR-PHASE EPITAXY; B1. NITRIDES; B3. HIGH ELECTRON MOBILITY TRANSISTOR;

GALLIUM ALLOYS;

EID: 56549104907     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.060     Document Type: Article

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