In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/ GaN HEMT devices on Si (111)

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2010-2012

  Germain, M ^a   Cheng, K ^a,b   Derluyn, J ^a   Degroote, S ^a   Das, J ^a   Lorenz, A ^a,b   Marcon, D ^a,b   Van Hove, M ^a   Leys, M ^a   Borghs, G ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK FREE; DEEP DEFECTS; DEVICE PERFORMANCE; DRAIN LAG; EPIWAFERS; EX SITU; GAN BUFFER; GAN GROWTH; GAN HEMTS; GATE CURRENT; GATE LEAKAGES; GATE-LEAKAGE CURRENT; HIGH UNIFORMITY; III-NITRIDES; IN-SITU; LOW CURRENTS; MOVPE; PHOTOLUMINESCENCE SPECTRUM; PULSE I-V; SHEET RESISTIVITY; SI (1 1 1); SI SUBSTRATES; SIMULTANEOUS OPTIMIZATION; SURFACE TRAP; WAFER DIAMETER;

CHEMICAL VAPOR DEPOSITION; DISPERSIONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTOR GROWTH; SILICON;

SILICON WAFERS;

EID: 56549088898     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778688     Document Type: Conference Paper

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