Electron irradiation effects on the properties of heavily phosphorus-doped a-Si : H films prepared from undiluted silane

Journal of Physics D: Applied Physics

Volumn 41, Issue 20, 2008, Pages

  Liao, N M ^a   Li, W ^a   Jiang, Y D ^a   Wu, Z M ^a   Li, S B ^a   Liu, Z ^a   Li, Z ^a   Jin, X ^a   Chen, Y X ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTRONS; IRRADIATION; METALLIC FILMS; NONMETALS; PHOSPHORUS; RADIATION; SILANES; SILICON;

AMORPHOUS NETWORKS; DARK CONDUCTIVITIES; DEFECT CREATIONS; H FILMS; IRRADIATION TIMES; ORDERS OF MAGNITUDES; STRUCTURAL DEFECTS;

ELECTRON IRRADIATION;

EID: 56349169550     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/20/205412     Document Type: Article

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