Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 477-480

  Bruggemann R ^a   Brehme, S ^b   Kleider, J P ^c   Gueunier, M E ^c   Bronner, W ^d  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

^c UNIV PARIS SUD   (France)

^d UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLINE MATERIALS; DIFFUSION; ELECTRON IRRADIATION; FERMI LEVEL; HYDROGENATION; PARAMAGNETIC RESONANCE; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROTON IRRADIATION; RAMAN SCATTERING; SEMICONDUCTOR DOPING;

CONSTANT PHOTOCURRENT METHOD (CPM); MICROCRYSTALLINE SILICON; PHOTODEFLECTION SPECTROSCOPY; PHOTON FLUX;

SILICON;

EID: 2942616759     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.023     Document Type: Conference Paper

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