Persistent excited conductivity induced by proton irradiation in a-Si:H

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 599-604

  Amekura, H ^a,b   Kishimoto, N ^a   Kono, K ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

a Si:H; PEC; Radiation damage; Radiation induced conductivity; Staebler Wronski effect

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDROGEN; LOW TEMPERATURE EFFECTS; PROTONS; RADIATION EFFECTS;

PERSISTENT EXCITED CONDUCTIVITY (PEC); STAEBLER WRONSKI EFFECTS;

AMORPHOUS SILICON;

EID: 0031375481     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.599     Document Type: Article

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