Stability of low pressure chemical vapour deposition amorphous silicon

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 78-81

  Kostana, M ^a   Jang, J ^b   Pietruszko, S M ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b Kyung Hee University   (South Korea)

Author keywords

Amorphous silicon; Doping; Hydrogenation; Metastability; Quenching

Indexed keywords

EID: 0007709750     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01389-3     Document Type: Article

References (4)

1. D.G. Ast, M.H. Brodsky, Inst. Phys. Conf. Ser. 43 (1979) 1159.
2. D.L. Staebler, C.R. Wronski, Appl. Phys. Lett. 31 (1977) 292.
3. S.M. Pietruszko, M. Pachocki, J. Jang, J. Non Cryst. Solids 198-200 (1996) 73.
4. M. Stuztmann, W.B. Jackson, C.C. Tsai, Phys. Rev. B 32 (1985) 23.