The effect of structural disorder on mechanical stress in a-Si:H films

Journal of Physics D: Applied Physics

Volumn 34, Issue 17, 2001, Pages 2589-2592

  Pantchev, B ^a   Danesh, P ^a   Savatinova, I ^a   Liarokapis, E ^b   Schmidt, B ^c   Grambole, D ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BACKSCATTERING; COMPRESSIVE STRESS; ION IMPLANTATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY;

RAMAN BACKSCATTERING SPECTROSCOPY;

THIN FILMS;

EID: 0035822936     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/17/303     Document Type: Article

References (22)