Creation of metastable defects in a-Si:H by keV-electron irradiation at different temperatures

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 436-440

  Diehl, F ^a   Herbst, W ^a   Bauer, S ^a   Schroder B ^a   Oechsner, H ^a  

^a Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRONS; GLOW DISCHARGES; HYDROGEN; HYDROGENATION; IRRADIATION; KINETIC THEORY; PHOTOCONDUCTIVITY; TEMPERATURE; THERMAL EFFECTS;

DEFECT DENSITY; ELECTRON INTENSITY; ELECTRON IRRADIATION; HYDROGENATED AMORPHOUS SILICON;

AMORPHOUS SILICON;

EID: 17144461526     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00717-2     Document Type: Article

References (8)

1. A. Scholz and B. Schröder, J. Non-Cryst. Sol. 137&138 (1991) 259.
2. A. Scholz, B. Schehr and B. Schröder, Solid State Commun. 85 (1993) 753.
3. U. Schneider and B. Schröder, Solid State Commun. 69 (1989) 895.
4. P. Stradins and H. Fritzsche, MRS Symp. Proc. 297 (1993) 571.
5. K. Shepard, Z.E. Smith, S. Aljishi and S. Wagner, Appl. Phys. Lett. 53 (1988) 1644.
6. P. Stradins, M.Q. Tran and H. Fritzsche, J. Non-Cryst. Sol. 164-166 (1993) 175.
7. L. Yang and L. Chen, Appl. Phys. Lett. 63 (1993) 400.
8. N. Hata and S. Wagner, J. Appl. Phys. 72 (1992) 2857.