Electron spin resonance in thin film silicon after low temperature electron irradiation

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7513-7516

  Astakhov, O ^a,b   Finger, F ^a   Carius, R ^a   Lambertz, A ^a   Petrusenko, Yu ^b   Borysenko, V ^b   Barankov, D ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b KHARKOV INSTITUTE OF PHYSICS AND TECHNOLOGY   (Ukraine)

Author keywords

Amorphous and microcrystalline silicon; Defects; Electron irradiation; ESR

Indexed keywords

CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRON IRRADIATION; MICROCRYSTALLINE SILICON; PARAMAGNETIC RESONANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CONDUCTION ELECTRON; DOPING LEVELS; ELECTRON BOMBARDMENT; PARAMAGNETIC DEFECTS;

THIN FILMS;

EID: 34547559983     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.115     Document Type: Article

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