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Volumn 25, Issue 9, 2008, Pages 3448-3451
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Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces
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Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM NITRIDE;
III-V SEMICONDUCTORS;
LIGHT;
PLASMA ETCHING;
GAN-BASED LIGHT-EMITTING DIODES;
LIGHT EXTRACTION;
LIGHT OUTPUT POWER;
OPTICAL PERFORMANCE;
PL MAPPING;
RELAXATION OF STRESS;
ROUGHENED SURFACES;
LIGHT EMITTING DIODES;
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EID: 56349115855
PISSN: 0256307X
EISSN: 17413540
Source Type: Journal
DOI: 10.1088/0256-307X/25/9/095 Document Type: Article |
Times cited : (9)
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References (18)
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