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Volumn 45, Issue 1-3, 2006, Pages

Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency

Author keywords

GaN; InGaN; Light emitting diode; MOCVD regrowth; Surface roughness

Indexed keywords

GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

INGAN; MICROHILLOCKS; MOCVD REGROWTH; PHOTO ENHANCED CHEMICAL (PEC) WET ETCH;

NANOSTRUCTURED MATERIALS;

EID: 32044448556 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L4 Document Type: Article

Times cited : (13)

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