Ohmic contacts to single-crystalline 3C-SiC films for extreme-environment MEMS applications

Microelectronics Journal

Volumn 39, Issue 12, 2008, Pages 1408-1412

  Chung, Gwiy Sang ^a   Yoon, Kyu Hyung ^a  

^a University of Ulsan   (South Korea)

Author keywords

Contact resistivity; Ohmic contact; Single crystalline 3C SiC; TiW

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COMPOSITE MICROMECHANICS; CRYSTALLINE MATERIALS; ELECTRIC CONTACTORS; ELECTROMAGNETIC WAVES; MEMS; MICROELECTROMECHANICAL DEVICES; OHMIC CONTACTS; PHASE INTERFACES; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON CARBIDE; SILICON WAFERS; THICK FILMS; TITANIUM; TUNGSTEN; X RAY ANALYSIS;

A STABLES; APPLICATIONS.; BEFORE AND AFTER; CIRCULAR TRANSMISSION LINE MODELS; CONTACT MATERIALS; CONTACT PHASES; CONTACT RESISTIVITIES; CONTACT RESISTIVITY; HIGH TEMPERATURES; MEMS APPLICATIONS; MICRO-ELECTRO-MECHANICAL SYSTEMS; OHMIC CONTACT FORMATIONS; RAPID THERMAL ANNEAL PROCESSES; SCANNING ELECTRON MICROSCOPES; SIC FILMS; SIC SUBSTRATES; SIC THIN FILMS; SINGLE-CRYSTALLINE 3C-SIC; TIW; X-RAY DIFFRACTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56249148145     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.052     Document Type: Article

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