High temperature ohmic contacts to 3C-SiC grown on Si substrates by chemical vapor deposition

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 176-179

  Constantinidis, G ^a   Kornilios, N ^a   Zekentes, K ^a   Stoemenos, J ^b   Di Cioccio, L ^c  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c CEA LETI   (France)

Author keywords

Ohmic metal contact; Semiconductors; Silicon carbide

Indexed keywords

AGING OF MATERIALS; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRON BEAMS; EVAPORATION; METALLIZING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; THERMODYNAMIC STABILITY;

ELECTRON BEAM EVAPORATION;

OHMIC CONTACTS;

EID: 0031125133     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01958-7     Document Type: Article

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