High temperature ohmic contacts to 3C-silicon carbide films

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2329-2334

  Jacob, C ^a   Pirouz, P ^a   Kuo, H I ^a   Mehregany, M ^a  

^a Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC RESISTANCE MEASUREMENT; HIGH TEMPERATURE EFFECTS; NICKEL; OHMIC CONTACTS; SILICON CARBIDE; TEMPERATURE MEASUREMENT; TUNGSTEN;

SPECIFIC CONTACT;

SEMICONDUCTING FILMS;

EID: 0032297106     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00234-2     Document Type: Article

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