Electrical properties of n-type GaPN grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Furukawa, Yuzo ^a   Yonezu, Hiroo ^a   Wakahara, Akihiro ^a   Yoshizumi, Yusuke ^a   Morita, Yoshiro ^a   Sato, Atsushi ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; DOPING (ADDITIVES); ELECTRON MOBILITY; HETEROJUNCTIONS; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; PLASMA SOURCES;

DOPANTS; ELECTRON CONCENTRATION; FREE ELECTRONS; IMPURITY SCATTERING;

GALLIUM COMPOUNDS;

EID: 33646696426     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2193350     Document Type: Article

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