Increase in luminescence efficiency of GaPN layers by thermal annealing

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2741-2744

  Utsumi, A ^a   Yonezu, H ^a   Furukawa, Y ^a   Momose, K ^a   Kuroki, K ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; LOW TEMPERATURE PHOTOLUMINESCENCE; LUMINESCENCE EFFICIENCIES; LUMINESCENCE INTENSITY; LUMINESCENCE PROPERTIES; NITROGEN COMPOSITION; RAPID THERMAL ANNEALING (RTA); SPATIAL FLUCTUATION;

LUMINESCENCE; LUMINESCENCE OF INORGANIC SOLIDS; NITRIDES; RAPID THERMAL ANNEALING; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 10644268167     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303346     Document Type: Conference Paper

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