MBE growth of highly strained InGaPN/GaPN quantum well with high indium content

Journal of Crystal Growth

Volumn 293, Issue 2, 2006, Pages 359-364

  Kim, S M ^a   Furukawa, Y ^a   Yonezu, H ^a   Umeno, K ^a   Wakahara, A ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. High resolution X ray diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting quaternary alloys; B3. Light emitting diodes

Indexed keywords

COMPUTATIONAL METHODS; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

CONDUCTION BANDS; HIGH RESOLUTION X RAY DIFFRACTION; SEMICONDUCTING QUATERNARY ALLOYS; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746422992     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.06.010     Document Type: Article

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