Ferromagnetism in Co- and Mn-doped ZnO

Solid-State Electronics

Volumn 47, Issue 12, 2003, Pages 2231-2235

  Theodoropoulou, N A ^a   Hebard, A F ^a   Norton, D P ^b   Budai, J D ^c   Boatner, L A ^c   Lee, J S ^d   Khim, Z G ^d   Park, Y D ^d   Overberg, M E ^b   Pearton, S J ^b   Wilson, R G ^e  

^a University of Florida ^*  (United States)

^b University of Florida   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d Seoul National University   (South Korea)

^e NONE   (United States)

Author keywords

Ferromagnetic semiconductor; Implantation; Oxides; Zinc oxide

Indexed keywords

ANNEALING; COBALT; DOPING (ADDITIVES); FERROMAGNETISM; ION IMPLANTATION; MANGANESE;

HYSTERESIS LOOPS;

ZINC OXIDE;

EID: 0142075250     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00203-X     Document Type: Article

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