High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4871-4875

  Chen, Jun Rong ^a   Ling, Shih Chun ^a   Hung, Chin Tsang ^a   Ko, Tsung Shine ^a   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

ALUMINA; ALUMINUM COMPOUNDS; BRAGG CELLS; BRAGG REFLECTORS; CORUNDUM; CRACKS; DISTRIBUTED BRAGG REFLECTORS; EMISSION SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL MICROSCOPY; PLASMA DIAGNOSTICS; POWDERS; REFLECTION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SULFUR COMPOUNDS; VAPORS;

A1. CRYSTAL MORPHOLOGY; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B2. SEMICONDUCTING ALUMINUM COMPOUNDS; CRYSTAL QUALITIES; EMISSION SPECTRUMS; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; PARTIAL CRACKS; PEAK REFLECTIVITIES; PHOTOLUMINESCENCE MEASUREMENTS; SAPPHIRE SUBSTRATES; STRAIN INHOMOGENEITY; ULTRA VIOLETS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 56249103076     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.025     Document Type: Article

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