High-reflectivity AlGaN/AlN distributed bragg reflector in ultraviolet region

Chinese Physics Letters

Volumn 24, Issue 6, 2007, Pages 1735-1737

  Ji, Xiao Li ^a   Jiang, Ruo Lian ^a   Xie, Zi Li ^a   Liu, Bin ^a   Zhou, Jian Jun ^a   Li, Liang ^a   Han, Ping ^a   Zhang, Rong ^a   Zheng, You Dou ^a   Gong, Hai Mei ^b  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ATOMIC FORCE MICROSCOPY; DISTRIBUTED BRAGG REFLECTORS; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFLECTION; SAPPHIRE; SURFACE ROUGHNESS; X RAY DIFFRACTION;

ALTERNATING LAYERS; DISTRIBUTED-BRAGG-REFLECTORS; GROWTH STEPS; HIGH REFLECTIVITY; LOW SURFACE ROUGHNESS; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; OPTICAL MICROSCOPES; SAPPHIRE SUBSTRATES; TWO-DIMENSIONAL GROWTH; ULTRAVIOLET REGION;

SCANNING ELECTRON MICROSCOPY;

EID: 34250024927     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/6/083     Document Type: Article

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