Optimization of electrical characteristics of TiO2-incorporated HfO2n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Applied Physics Letters

Volumn 91, Issue 8, 2007, Pages

  Park, Sung Il ^a   Ok, Injo ^a   Kim, Hyoung Sub ^a   Zhu, Feng ^a   Zhang, Manhong ^a   Yum, Jung Hwan ^a   Han, Zhao ^a   Lee, Jack C ^a  

^a The University of Texas at Austin

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; HYSTERESIS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; THICKNESS MEASUREMENT;

LOWER TRAP DENSITY; MULTIMETAL DIELECTRICS; SEMICONDUCTOR CAPACITORS;

TITANIUM DIOXIDE;

EID: 34548252021     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2775048     Document Type: Article

References (7)

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2. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
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4. Byoung Hun Lee, Laegu Kang, Wen-Jie Qi, Renee Nieh, Yongjoo Jeon, Katsunori Onishi, and Jack C. Lee, Tech. Dig. - Int. Electron Devices Meet. 1999, 133.
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6. E. H. Nicollian and J. R. Brews, MOS Physics and Technology, 2003 (unpublished).
7. C. D. Young, Gennadi Bersuker, George A. Brown, Chan Lim, Patrick Lysaght, Peter Zeitzoff, Robert W. Murto, and Howard R. Huff, Integrated Reliability Workshop, 2003 (unpublished), pp. 28-35.