Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 51-55

  Jang, Moongyu ^a   Kim, Yarkyeon ^a   Shin, Jaeheon ^a   Lee, Seongjae ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Erbium silicide; SB MOSFETs; Schottky barrier

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ERBIUM COMPOUNDS; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SILICON ON INSULATOR TECHNOLOGY; X RAY DIFFRACTION ANALYSIS;

ERBIUM-SILICIDES; GROWTH MECHANISMS; SB-MOSFET; SCHOTTKY BARRIERS;

MOSFET DEVICES;

EID: 10644297303     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.032     Document Type: Conference Paper

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