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Volumn 203, Issue 5-7, 2008, Pages 799-803
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Effect of initial crystallized silicon layer on the properties of microcrystalline silicon grown by internal inductively coupled plasma-type plasma enhanced chemical vapor deposition
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Author keywords
H2 SiH4; Inductively coupled plasma; Microcrystalline silicon; PECVD
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Indexed keywords
CHEMICAL PROPERTIES;
CRYSTALLIZATION;
DEPOSITION;
GLASS;
GRAIN GROWTH;
HYDROGEN;
INDUCTIVELY COUPLED PLASMA;
MICROCRYSTALLINE SILICON;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALLINE MATERIALS;
NANOCRYSTALLINE SILICON;
NANOSTRUCTURED MATERIALS;
NONMETALS;
PHOTORESISTS;
PLASMA DEPOSITION;
PLASMA DIAGNOSTICS;
PLASMAS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SOLIDS;
THICK FILMS;
THIN FILM DEVICES;
THIN FILMS;
VAPORS;
GAS RATIOS;
GLASS SUBSTRATES;
H2/SIH4;
HYDROGEN DILUTIONS;
NANOCRYSTALLINE GRAINS;
NANOCRYSTALLINE STRUCTURES;
NUCLEATION SITES;
PECVD;
SILICON LAYERS;
SILICON THIN FILMS;
THIN SILICON LAYERS;
VAPOR DEPOSITION SYSTEMS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
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EID: 55749102261
PISSN: 02578972
EISSN: None
Source Type: Journal
DOI: 10.1016/j.surfcoat.2008.08.025 Document Type: Article |
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Times cited : (3)
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References (14)
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