Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7058, Issue , 2008, Pages

  Tansu, Nelson ^a   Arif, Ronald A ^a   Zhao, Hongping ^a   Huang, G S ^a   Ee, Yik Khoon ^a  

^a Lehigh University   (United States)

Author keywords

InGaN QW; Light emitting diodes; Polarization field engineering; Radiative efficiency; Spontaneous recombination rate

Indexed keywords

ACTIVE REGIONS; EMISSION WAVELENGTHS; ENERGY DISPERSIONS; FERMI'S GOLDEN RULES; HIGH EFFICIENCIES; INDUCED ELECTRIC FIELDS; INGAN QW; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; NITRIDE NANOSTRUCTURES; OUTPUT POWERS; POLARIZATION FIELD ENGINEERING; QUANTUM WELLS; RADIATIVE EFFICIENCY; RADIATIVE RECOMBINATION RATES; SEMI-CONDUCTORS; SPONTANEOUS RECOMBINATION RATE; STRAIN EFFECTS; TRANSITION MATRIX ELEMENTS; VISIBLE LIGHTS; WURTZITE;

CATHODOLUMINESCENCE; DIODES; ELECTRIC FIELDS; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHYSICAL OPTICS; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; STEREOCHEMISTRY; WATER ANALYSIS; WELLS; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 55649123947     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.802482     Document Type: Conference Paper

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