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Volumn 354, Issue 52-54, 2008, Pages 5372-5377
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Disorder effects produced by the Mn and H incorporations on the optical absorption edge of Ga1-xMnxAs:H nanocrystalline films
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Author keywords
Absorption; Amorphous semiconductors; Crystallization; Films and coatings; III V semiconductors; Microcrystallinity; Microstructure; Nanocrystals; Optical properties; Sputtering
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Indexed keywords
ABSORPTION;
AMORPHOUS SEMICONDUCTORS;
CRUDE PETROLEUM;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
ELECTROMAGNETIC WAVE ABSORPTION;
ENERGY ABSORPTION;
GALLIUM ALLOYS;
HYDROGEN;
HYDROGENATION;
HYDROGENOLYSIS;
LIGHT ABSORPTION;
MANGANESE;
MANGANESE ALLOYS;
MANGANESE COMPOUNDS;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALLINE MATERIALS;
NANOSTRUCTURED MATERIALS;
OPTICAL CORRELATION;
OPTICAL PROPERTIES;
SEMICONDUCTOR MATERIALS;
AB SORPTION COEFFICIENTS;
DISORDER EFFECTS;
ENERGY DISPERSIVE;
FILMS AND COATINGS;
H FILMS;
HYDROGEN INCORPORATIONS;
HYDROGENATED FILMS;
III-V SEMICONDUCTORS;
LINEAR CORRELATIONS;
MICROCRYSTALLINITY;
NANOCRYSTALLINE;
NANOCRYSTALLINE FILMS;
NEAR INFRARED;
OPTICAL ABSORPTION EDGES;
OPTICAL GAPS;
PHASE FORMATIONS;
POTENTIAL FLUCTUATIONS;
TRANSMITTANCE MEASUREMENTS;
ULTRA VIOLETS;
URBACH ENERGIES;
X-RAY DIFFRACTIONS;
AMORPHOUS FILMS;
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EID: 55649112691
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2008.09.025 Document Type: Article |
Times cited : (7)
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References (40)
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