Growth condition dependence of structure and surface morphology of GaN films on (111) GaAs substrates prepared by reactive sputtering

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1290-1294

  Guo, Q X ^a   Lu, W J ^b   Zhang, D ^b   Tanaka, T ^a   Nishio, M ^a   Ogawa, H ^a  

^a SAGA UNIVERSITY   (Japan)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; GROWTH PARAMETERS; RADIO FREQUENCY; SPUTTERING PRESSURE;

ACTIVATION ENERGY; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRODES; GALLIUM NITRIDE; GROWTH (MATERIALS); LIGHT ABSORPTION; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SURFACES; X RAY DIFFRACTION;

SEMICONDUCTING FILMS;

EID: 4444258490     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1765133     Document Type: Article

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