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11144234780
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note
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The substrate holder temperature was monitored during all the depositions using an externally fitted thermocouple. The thermocouple, situated at a distance of 3 mm from the substrate surface, was placed in a hole in the substrate holder from the external part of the chamber. Thermal contact of the thermocouple with the hole end was facilitated through the application of thermal grease. The thermocouple was encapsulated by a ceramic insulating tube so that only its tip reached the measurement point. We noted that the temperature of this point only changed by a few degrees during the depositions (3°C-8°C). The fact that the depositions only lasted for 5 to 6 minutes coupled with the fact that the stainless-steel substrate holder is massive (approximately 2 kg), and was connected to the chamber top flange (stainless steel) through a thermally conducting short neck accounts for this observation.
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17
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11144240426
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note
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We can set an upper limit for the presence of hydrogen bonded to gallium or arsenic in the samples considered here as 0.1 at. %. This limit was established by comparing the spectra of our samples with that of samples of similar thicknesses prepared through rf sputtering in the presence of hydrogen. In the hydrogenated samples, concentrations of less than 1 at. % hydrogen correspond to the easily detectable spectral features, while in our samples the spectra were found to be completely featureless.
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18
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0036530857
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R. R. Campomanes, J. H. Dias da Silva, J. Vilcarromero, and L. P. Cardoso, J. Non-Cryst. Solids 299-302, 788 (2002).
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Campomanes, R.R.1
Dias Da Silva, J.H.2
Vilcarromero, J.3
Cardoso, L.P.4
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20
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11144219915
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note
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The a-GaAs experimental data does not span across this fitting range for all of the samples considered in this analysis. For these samples, the fits of Eq. (1) are performed with the available experimental data.
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26
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0000400936
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W. B. Jackson, S. M. Kelso, C. C. Tsai, J. W. Allen, and S.-J. Oh, Phys. Rev. B 31, 5187 (1985).
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Jackson, W.B.1
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Tsai, C.C.3
Allen, J.W.4
Oh, S.-J.5
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29
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11144238841
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30 for the specific case of a-Si:H
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30 for the specific case of a-Si:H.
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30
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0020809616
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C. B. Roxlo, B. Abeles, C. R. Wronski, G. D. Cody, and T. Tiedje, Solid State Commun. 47, 985 (1983).
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Roxlo, C.B.1
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Wronski, C.R.3
Cody, G.D.4
Tiedje, T.5
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31
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11144246672
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A recent Urbach focus analysis for the case of a-Si:H has been presented by Orapunt and O'Leary (Ref. 32)
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A recent Urbach focus analysis for the case of a-Si:H has been presented by Orapunt and O'Leary (Ref. 32).
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