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Volumn 96, Issue 12, 2004, Pages 7052-7059

Relationship between the optical gap and the optical-absorption tail breadth in amorphous GaAs

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COMPUTATIONAL METHODS; CRYSTAL STRUCTURE; LASERS; LIGHT ABSORPTION; SPECTRUM ANALYSIS; SUBSTRATES;

EID: 11144236580     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1797541     Document Type: Article
Times cited : (16)

References (34)
  • 9
    • 0021558454 scopus 로고
    • Hydrogenated Amorphous Silicon, edited by J. I. Pankove (Academic, New York)
    • G. D. Cody, in Hydrogenated Amorphous Silicon, Semiconductors and Semimetals Vol. 21B, edited by J. I. Pankove (Academic, New York, 1984), p. 11.
    • (1984) Semiconductors and Semimetals , vol.21 B , pp. 11
    • Cody, G.D.1
  • 16
    • 11144234780 scopus 로고    scopus 로고
    • note
    • The substrate holder temperature was monitored during all the depositions using an externally fitted thermocouple. The thermocouple, situated at a distance of 3 mm from the substrate surface, was placed in a hole in the substrate holder from the external part of the chamber. Thermal contact of the thermocouple with the hole end was facilitated through the application of thermal grease. The thermocouple was encapsulated by a ceramic insulating tube so that only its tip reached the measurement point. We noted that the temperature of this point only changed by a few degrees during the depositions (3°C-8°C). The fact that the depositions only lasted for 5 to 6 minutes coupled with the fact that the stainless-steel substrate holder is massive (approximately 2 kg), and was connected to the chamber top flange (stainless steel) through a thermally conducting short neck accounts for this observation.
  • 17
    • 11144240426 scopus 로고    scopus 로고
    • note
    • We can set an upper limit for the presence of hydrogen bonded to gallium or arsenic in the samples considered here as 0.1 at. %. This limit was established by comparing the spectra of our samples with that of samples of similar thicknesses prepared through rf sputtering in the presence of hydrogen. In the hydrogenated samples, concentrations of less than 1 at. % hydrogen correspond to the easily detectable spectral features, while in our samples the spectra were found to be completely featureless.
  • 20
    • 11144219915 scopus 로고    scopus 로고
    • note
    • The a-GaAs experimental data does not span across this fitting range for all of the samples considered in this analysis. For these samples, the fits of Eq. (1) are performed with the available experimental data.
  • 29
    • 11144238841 scopus 로고    scopus 로고
    • 30 for the specific case of a-Si:H
    • 30 for the specific case of a-Si:H.
  • 31
    • 11144246672 scopus 로고    scopus 로고
    • A recent Urbach focus analysis for the case of a-Si:H has been presented by Orapunt and O'Leary (Ref. 32)
    • A recent Urbach focus analysis for the case of a-Si:H has been presented by Orapunt and O'Leary (Ref. 32).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.