Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 238, Issue 1-4, 2005, Pages 329-333

  Azevedo, G De M ^a   Dias Da Silva, J H ^b   Avendano E ^a,c  

^a LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^b SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^c UNIVERSIDAD DE COSTA RICA   (Costa Rica)

Author keywords

EXAFS; GaAs; Gallium arsenide; Hydrogenation; Sputtering

Indexed keywords

CRYSTALLINE MATERIALS; HYDROGENATION; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE;

EXAFS; GAAS; OPTICAL ABSORPTION MEASUREMENT; STRUCTURAL PROPERTIES;

THIN FILMS;

EID: 25144481883     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.06.071     Document Type: Conference Paper

References (10)

1. B.-S. Yoo IEEE J. Quant. Electron. 33 1997 1794
2. K.I. Cho J. Appl. Phys. 69 1991 237
3. A.R. Zanatta Appl. Phys. Lett. 75 1999 3279
4. L. Ouyang J. Appl. Phys. 91 2002 3459 and references therein
5. H.C.N. Tolentino J. Synchrotron Rad. 8 2001 1040
6. Z.P. Wang Phys. Rev. B 26 1982 3249
7. R.A. Street Hydrogenated Amorphous Silicon 1991 Cambridge University Press Cambridge
8. M. Newville J. Synchrotron Rad. 8 2001 322
9. A.L. Ankudinov Phys. Rev. B 58 1998 7565
10. G. Dalba J. Phys.: Condens. Matter 9 1997 5875