Comparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOS

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2154-2157

  Brammertz, G ^a   Heyns, M ^a,b   Meuris, M ^a   Caymax, M ^a   Jiang, D ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

GaAs; InGaAs; Photoluminescence; Surface recombination velocity

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY GAP; OXIDES; PHOTOLUMINESCENCE; THIN FILMS;

PHOTOLUMINESCENCE INTENSITY (PLI) MEASUREMENTS; SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 34248659416     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.021     Document Type: Article

References (14)

1. Koester S.J., Kiewra E.W., Sun Y., et al. Appl. Phys. Lett. 89 (2006) 042104
2. Passlack M., Medendorp N., Gregory R., and Braddock D. Appl. Phys. Lett. 83 (2003) 5262
3. Ye P.D., Wilk G.D., Yang B., Kwo J., Chu S.N.G., Nakahara S., Gossmann H.-J.L., Mannaerts J.P., Hong M., Ng K.K., and Bude J. Appl. Phys. Lett. 83 (2003) 180
4. Kim H.S., Ok I., Zhang M., Lee T., Zhu F., Yu L., and Lee J.C. Appl. Phys. Lett. 89 (2006) 222904
5. Koveshnikov S., Tsai W., Ok I., Lee J.C., Tokranov V., Yakimov M., and Oktyabrsky S. Appl. Phys. Lett. 88 (2006) 022106
6. Ye P.D., Wilk G.D., Yang B., Kwo J., Gossmann H.-J.L., Hong M., Ng K.K., and Bude J. Appl. Phys. Lett. 84 (2004) 434
7. Hasegawa H., Akazawa M., Matsuzaki K.I., Ishii H., and Ohno H. Jpn. J. Appl. Phys. 27 (1988) L2265
8. Huang M.L., Chang Y.C., Chang C.H., Lee Y.J., Chang P., Kwo J., Wu T.B., and Hong M. Appl. Phys. Lett 87 (2005) 252104
9. Goel N., Majhi P., Chui C.O., Tsai W., Choi D., and Harris J.S. Appl. Phys. Lett 89 (2006) 163517
10. G. Brammertz, M. Heyns, M. Meuris, M. Caymax, D. Jiang, Y. Mols, S. Degroote, M. Leys, G. Borghs, accepted for publication in Appl. Phys. Lett. (2007).
11. Brammertz G., Mols Y., Degroote S., Motsnyi V., Leys M., Borghs G., and Caymax M. J. Appl. Phys. 99 (2006) 093514
12. Yablonovitch E., Bhat R., Zhat C.E., Gmitter T.J., and Koza M.A. Appl. Phys. Lett. 60 (1991) 371
13. Zhang M.H., Oye M., Cobb B., Zhu F., Kim H.S., Ok I.J., Hurst J., Lewis S., Holmes A., Lee J.C., Koveshnikov S., Tsai W., Yakimov M., Torkanov V., and Oktyabrsky S. J. Appl. Phys. 101 (2007) 034103
14. Huang M.L., Chang Y.C., Chang C.H., Lin T.D., Kwo J., Wu T.B., and Hong M. Appl. Phys. Lett 89 (2006) 012903